TPC8401

NP -Channel, 1.5 W, 30 V MOSFET

Low drain−source ON resistance
P Channel RDS (ON) = 27 mΩ (typ.)
N Channel RDS (ON) = 14 mΩ (typ.)
High forward transfer admittance
P Channel |Yfs| = 7 S (typ.)
N Channel |Yfs| = 8 S (typ.)
Low leakage current
P Channel IDSS = −10 µA (VDS = −30 V)
N Channel IDSS = 10 µA (VDS = 30 V)
Enhancement−mode
P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 0.8~2.5 V (VDS = 10 V, ID = 1mA)