ماسفت IRFSL4510

100V Single N-Channel HEXFET Power MOSFET in a D2 package

Features

Static drain-source on-resistance RDS(on) ≤13.5mΩ

Enhancement mode ·Fast Switching Speed

• Silicon optimized for applications switching below <100 kHz

100% avalanche tested

Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits