100V Single N-Channel HEXFET Power MOSFET in a D2 package
Features
Static drain-source on-resistance RDS(on) ≤13.5mΩ
Enhancement mode ·Fast Switching Speed
- Silicon optimized for applications switching below <100 kHz
100% avalanche tested
Minimum Lot-to-Lot variations for robust device performance and reliable operation
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
نقد و بررسیها
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