Single N-Channel HEXFET Power MOSFET 55V 110A 6.5mOhm in a TO-220AB package

Description

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well knownfor, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide acceptance throughout the industry.