FDN302P

MOSFET – P-Channel, 2.5 V

Features

−20 V, −2.4 A    RDS(ON) = 0.055 @ VGS = −4.5 V | RDS(ON) = 0.080 @ VGS = −2.5 V
Fast Switching Speed
High Performance Trench Technology for Extremely Low RDS(ON)
SUPERSOT−3 Provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT−23 in the Same Footprint
This is a Pb−Free and Halide Free Device

Applications

Power Management
Load Switch
Battery Protection