PNP SILICON POWER TRANSISTORS

Vce: 80V – Ic: 8A – Ptot: 50W

DESCRIPTION

The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are BD534, BD536, and BD538 respectively. TO-220

Symbol Parameter NPN PNP V CBO V CES V CEO V EBO IB P tot T stg Tj Collector-Base Voltage = 0) Collector-Emitter Voltage = 0) Collector-Emitter Voltage = 0) Emitter-Base Voltage = 0) Collector and Emitter Current Base Current Total Dissipation o C Storage Temperature Max. Operating Junction Temperature BD534 45 Value BD538 80

R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max 2.5 70

ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)

Symbol I CBO Parameter Collector Cut-off Current = 0) Collector Cut-off Current = 0) Emitter Cut-off Current = 0) Test Conditions for BD533/534 for BD535/536 for BD537/538 for BD533/534 for BD535/536 for 100 mA for BD533/534 for BD535/536 for 5 V for BD533/534 for BD535/536 for BD537/538 VCE 2 V for BD533/534 for BD535/536 for BD537/538 VCE 1 V MHz 80 V Min. Typ. Max. Unit µA mA

V CEO(sus) Collector-Emitter Sustaining Voltage 0) V CE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP types voltage and current values are negative.