SRAM 8Mb 1Mb x 8 10ns Async SRAM 3.3v
FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
– Vdd 1.65V to 2.2V (IS61WV10248ALL) speed = 20ns for Vcc = 1.65V to 2.2V
– Vdd 2.4V to 3.6V (IS61/64WV10248BLL) speed = 10ns for Vcc = 2.4V to 3.6V, speed = 8ns for Vcc = 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
نقد و بررسیها
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